提供專業(yè)的磁場測量解決方案 | ||||||
強磁場測量儀器(0 - 20T) | ||||||
型號 | 原理 | 類型 | 軸數(shù) | DC精度 | 量程 | 分辨率 |
X113 | 霍爾 | 霍爾元件 | 1 | <> | 15T | TC: 30ppm/K |
G80 | 霍爾 | 手持式 | 1 | 2% | 2T | 10μT |
G81 | 霍爾 | 手持式 | 1 | 0.8% | 10T | 1μT |
G82 | 霍爾 | 手持式-高頻 | 1 | 0.8% | 10T | 1μT |
G83 | 霍爾 | 手持式 | 3 | 0.8% | 10T | 1μT |
G92 | 霍爾 | 手持式 | 1 | 1% | 10T | 10μT |
G93 | 霍爾 | 手持式 | 3 | 1%, 0.5% | 20T | 1μT |
G201 | 霍爾 | 臺式 | 1 | 0.2% | 10T | 1μT |
G203 | 霍爾/磁阻 | 臺式 | 3 | 0.2% | 10T | 10nT |
G401 | 霍爾 | 臺式 | 1 | 0.04% | 10T | 1μT |
G403 | 霍爾 | 臺式 | 3 | 0.04% | 10T | 1μT |
GSP301A | 霍爾 | 模擬變送器 | 1 | 1%, 0.2% | 10T | Output: ±3V |
GSP301D | 霍爾 | 數(shù)字變送器 | 1 | 1%, 0.2% | 10T | 1μT |
GSP303D | 霍爾 | 數(shù)字變送器 | 3 | 1%, 0.2% | 20T | 1μT |
GSP303D-S | 霍爾 | 數(shù)字變送器 | 3 | 0.5%, 0.1% | 3T | 1μT |
磁場測試系統(tǒng) | ||||||
GAS3000 | 陣列磁場檢測系統(tǒng)，同步檢測多達128個位置的磁場 | |||||
GMS980 | 高精度高斯計標定系統(tǒng) （高精度特斯拉計檢定裝置） | |||||
弱磁場測量儀器(0- 2mT) | ||||||
弱磁場高斯計 | ||||||
型號 | 原理 | 類型 | 軸數(shù) | DC精度 | 量程 | 分辨率 |
GMR61 | 磁阻 | 手持式 | 1 | 0.8% | 600μT | 10nT |
GMR63 | 磁阻 | 手持式 | 3 | 0.8% | 600μT | 10nT |
GF601 | 磁通門 | 手持式 | 1 | 0.5% | 1mT | 0.1nT |
GF603 | 磁通門 | 手持式 | 3 | 0.25% | 1mT | 0.1nT |
GF633 | 磁通門 | 臺式 | 3 | 0.1% | 100μT | 0.01nT |
GFP703 | 磁通門 | 智能變送器 | 3 | 0.5% | 1mT | 0.1nT |
GFP703S | 磁通門 | 頻譜分析儀 | 3 | 0.5% | 1mT | 0.01nT |
GFP803 | 磁通門 | 智能變送器 | 3 | 0.2% | 1mT | 0.1nT |
交流磁場測量(DC- 1MHz) | ||||||
型號 | 原理 | 類型 | 軸數(shù) | AC精度 | 量程 | 頻率響應 |
AMS-2K | 交流線圈 | 模擬傳感器 | 1 | 1% | 3mT | 30Hz- 2kHz |
AMS-1M | 交流線圈 | 模擬傳感器 | 1 | 1% | 3mT | 2kHz- 1MHz |
G1000 | 磁阻 | 智能變送器 | 3 | DC- 1% AC- 2% | 400μT/ Axis | DC- 1MHz |
GA1000 | 磁阻 | 手持式 | 3 | 2% | 400μT/ Axis | 30Hz- 1MHz |
GSP301HFA | 磁阻 | 模擬變送器 | 1 | 1% | 150μT | 20Hz-1.2MHz |
GSP303HFA | 磁阻 | 模擬變送器 | 1 | 1% | 150μT | 20Hz-1.2MHz |
磁通門傳感器 | ||||||
型號 | 原理 | 類型 | 軸數(shù) | 噪聲等級 | 量程 | 輸出 |
F901 | 磁通門 | 經濟型 | 3 | 10 to 20pT | 1000μT | ±10V,單端 |
F902 | 磁通門 | 低噪聲 | 3 | <> | 100μT | ±10V,單端 |
F903 | 磁通門 | 低功耗 | 3 | 10 to 20pT | 200μT | ±3V,差分 |
F904 | 磁通門 | 低功耗|低噪聲 | 3 | <> | 100μT | ±3V,差分 |
F905 | 磁通門 | 高性能|低噪聲 | 3 | <> | 100μT | ±10V,單端 |
F906 | 磁通門 | 低功耗 | 3 | 10 to 20pT | 100μT | ±3V,差分 |
F23 | 磁通門 | 分體式|大量程 | 3 | <> | 1500μT | ±10V,單端 |
F53 | 磁通門 | 高溫型 | 3 | ≤300pT@175℃ | 100μT | ±5V,差分 |
磁通門傳感器數(shù)據采集單元 | ||||||
FDU301 | 可連接1個三軸磁通門傳感器 | |||||
ASA1000 | 可連接2-126個單軸磁通門傳感器 或者2-42個三軸磁通門傳感器 | |||||
AFS | 陣列磁通門傳感器檢測系統(tǒng)，可連接多個磁通門磁場變送器 | |||||
GMR-16 | 微型弱磁場傳感器陣列，可同步采集2-16個微型弱磁場傳感器的數(shù)據 | |||||
GR100 | 數(shù)字式三軸磁通門梯度儀 | |||||
備注： 1、 磁場單位換算：1T= 10kG; 1mT= 10G; 1μT= 10mG; 1nT= 10μG 2、 點擊上表左側型號，可查閱相應型號的產品資料 | ||||||
Features:
l Instrumentation Quality
l Excellent linearity error : 0.05%
l TC of sensitivity: 30ppm/K
l Max Range : 15T
Typical Applications
l Current and power measurement
l Magnetic field measurement
l Control of brushless DC motors
l Rotation and position sensing
l Measurement of diaphragm
The third-generation semiconductor gallium nitride (GaN) Hall sensor X113, built into a SMT package (SOT-143), has the characteristics of good temperature stability, high linearity and low noise, which is superior to the second-generation semiconductor gallium arsenide (GaAs) sensor technology.
Hall sensor X113 is outstanding for its excellent linearity error 0.05% and very low temperature coefficients 30ppm/K. While the sensor is operated with constant current, the output hall voltage is directly proportional to a magnetic field acting perpendicular to the surface of the sensor.
Maximum Ratings
Parameter | Symbol | Value | Unit |
Operating temperature | TA | – 40 ? + 100 | °C |
Storage temperature | Tstg | – 60 ? + 130 | °C |
Supply current | I1 | 30 | mA |
Thermal conductivity, soldered in air | GthC GthA | 3 2.2 3 1.5 | mW/K mW/K |
Characteristics (TA = 25℃)
Parameter | Condition | MIN | TYP | MAX | Unit |
Nominal supply current | I1N | 20 | 30 | mA | |
Open-circuit hall voltage I1 = I1N, B = 0.1 T | V20 | 7.0 | 9.0 | mV | |
Ohmic offset voltage I1 = I1N, B = 0 T | VR0 | 0.1 | 0.3 | mV | |
Active area (in the sensor center) | 0.07 | mm2 | |||
Linearity of Hall voltage B = 0.1 ? 2.0 T | FL | 0.05 | % | ||
Input resistance B = 0 T | R10 | 60 | 75 | W | |
Output resistance B = 0 T | R20 | 60 | 75 | W | |
Temperature coefficient of the open-circuit Hall-voltage I1 = I1N, B = 0.5 T | TCV20 | -30 | ppm/K | ||
Temperature coefficient of the internal resistance B = 0 T | TCR10, R20 | 0.08 | %/K | ||
Temperature coefficient of ohmic offset voltage I1 = I1N, B = 0 T | TCVR 0 | 1 | 4 | μT/K | |
Noise figure | F | 10 | dB | ||
Range | 10 | 15 | Tesla |
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